Dry resist process optimization at the 0.33NA resolution limit and validation via large area e-test inspection

Dry deposited and dry developed photoresist continue to demonstrate low defectivity and roughness with 0.33NA imaging. This work showcases a test vehicle that was developed on 0.33 NA to characterize the dry resist performance at P26L/S single exposure and validate defectivity performance through large area electrical yield measurement. The effect of different process parameters such as underlayer, post exposure bake, dry development and mask bias, on post litho and post etch performance are evaluated using this test vehicle (e.g., we showed that by optimizing dry development chemistry we can improve roughness without impact to dose to size). The electrical yield in large area (1m long meander and fork-fork structures) is measured post a W-damascene based metallization, and is used to verify the yield benefit of the optimized resist chemistry. This vehicle offers the ability to co-optimize process parameters to demonstrate best roughness and defectivity. at improved sensitivity enabling us to push the limits of the RLS trade-off. By adopting this holistic approach, we demonstrate our readiness for high NA EUV patterning.