Accelerating high-NA introduction with RET innovations
The introduction of Extreme Ultraviolet (EUV) scanners into high-volume manufacturing of semiconductor chips required, and enabled, the development of the ecosystem around it: from EUV mask-making to new resist materials, and the corresponding Resolution-Enhancement Techniques (RET) to leverage the new developments. As the industry moves to adopt the new High-Numerical Aperture (High-NA) EUV scanners from ASML, being able to extrapolate the learnings on low-NA EUV to High-NA is critical to speeding-up the adoption of High-NA scanners. This paper discusses various RET capabilities and methodologies that were essential to having production-quality reticles available as soon as the tool was ready.
Authors
- Itty Matthew
- Stephen Hsu (ORCID: https://orcid.org/0000-0001-5829-5567)
- Ming-Chun Tien
- Can Güven (ORCID: https://orcid.org/0000-0001-6558-1780)
- Bo Yan (ORCID: https://orcid.org/0000-0002-7885-8109)
- R. Bigwood
- Vince Plachecki
- Ravi K. Venkatesan
- Cheng‐Xiang Wang (ORCID: https://orcid.org/0000-0002-9729-9592)
- Kedong Zhang (ORCID: https://orcid.org/0000-0001-6801-5928)
- Ruben Maas
- Harsha Grunes
- Luc van Kessel
Institutions
- Intel (United States) (US)
- ASML (United States) (US)
Publication Details
- Published
- 2025-04-22
- DOI
- https://doi.org/10.1117/12.3052425
- Citations
- 1
- Primary Topic
- Non-Destructive Testing Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.71