Laser direct writing of graphene quantum dots encircling conductive structures for stimuli-responsive anti-counterfeiting label

Graphene quantum dots (GQDs) are fluorescent materials whose fluorescence intensity changes in response to external stimuli. In this study, we demonstrated the fabrication of a semi-cylindrical conductive microstructure encircled by GQDs on polydimethylsiloxane in a single step by laser carbonization. By adjusting laser parameters, structures with different resistance values were selectively fabricated. Under the voltage application to the structure, Joule heating in low-resistance structures led to a decrease in GQDs fluorescence intensity, while high-resistance structures showed minimal changes. Combining these structures enabled voltage-responsive anti-counterfeiting labels, readable only under excitation light and voltage. The proposed method enables one-step fabrication of voltage-responsive structures by laser irradiation, thereby paving the way for the development of voltage-controlled anti-counterfeiting technology.

Authors

Publication Details

Journal
Optics Express
Published
2025-04-22
DOI
https://doi.org/10.1364/oe.561008
Citations
2
Primary Topic
Nonlinear Optical Materials Studies
Type
article
Field-Weighted Citation Impact
1.35
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article

Laser direct writing of graphene quantum dots encircling conductive structures for stimuli-responsive anti-counterfeiting label

Kosuke Tsukada, Mitsuhiro Terakawa
2 citations
Optics Express
Nonlinear Optical Materials Studies
1.35
article

Laser direct writing of graphene quantum dots encircling conductive structures for stimuli-responsive anti-counterfeiting label

Kosuke Tsukada, Mitsuhiro Terakawa
article en
2 citations

Abstract

Graphene quantum dots (GQDs) are fluorescent materials whose fluorescence intensity changes in response to external stimuli. In this study, we demonstrated the fabrication of a semi-cylindrical conductive microstructure encircled by GQDs on polydimethylsiloxane in a single step by laser carbonization. By adjusting laser parameters, structures with different resistance values were selectively fabricated. Under the voltage application to the structure, Joule heating in low-resistance structures led to a decrease in GQDs fluorescence intensity, while high-resistance structures showed minimal changes. Combining these structures enabled voltage-responsive anti-counterfeiting labels, readable only under excitation light and voltage. The proposed method enables one-step fabrication of voltage-responsive structures by laser irradiation, thereby paving the way for the development of voltage-controlled anti-counterfeiting technology.

Optics ExpressVol. 33(9)
Openalex Percentile: Top 21%
Nonlinear Optical Materials Studies
1.35
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