LATERAL PHOTOVOLTAGE IN HETEROSTRUCTURES BASED ON CsPbBr₃ PEROVSKITE QUANTUM DOTS

This paper presents the results of obtaining a thin-film hybrid structure on the surface of a single-crystal silicon wafer with a fairly thin layer of silicon dioxide (SiO2) (~2÷4 nm), in which a thin perovskite layer with colloidal quantum dots (QD) CsPbBr3 is deposited, as well as a study of its I-V characteristics and the phenomenon of the lateral photoelectric effect (LPE). The absorption and fluorescence spectra of the synthesized CsPbBr3 QDs, surface morphology images obtained using atomic force microscopy (AFM) and scanning electron microscopy (SEM) of the surface of the synthesized structure indicate the successful production of a thin layer of perovskite QDs on the surface of single-crystal silicon. In addition, the results of the I–V measurements showed that a heterojunction hybrid structure with good rectifying properties was obtained, and the results of the lateral photovoltage (LPV) measurements showed that the maximum value of the LPVs is quite high (± 250 mV) and has a linear dependence on the distance between the position of the laser spot and the contacts (with a linearity coefficient of 6.98%). Based on the results of the studies, it is shown that Al/CsPbBr3/SiO2/n-Si hybrid structures can be used in optoelectronics, solar energy, and for creating position-sensitive detectors (PSDs).