Electric transport in doped Mott insulators dictated by a non-Ioffe-Larkin composition rule and spinons
Electric resistivity is examined in the constrained Hilbert space of a doped Mott insulator, which is dictated by a non-Ioffe-Larkin composition rule due to the underlying mutual Chern-Simons topological gauge structure. In the low-temperature pseudogap phase, where holons remain condensed while spinons proliferate, charge transport is governed by chiral spinon excitation, comprising a bosonic spin-$\frac{1}{2}$ at the core of a supercurrent vortex. It leads to vanishing resistivity with the confinement of the spinons in the superconducting phase but low-$T$ divergence of the resistivity once the spinon confinement is disrupted by external magnetic fields. In the latter, the chiral spinons will generate a Hall number ${n}_{H}=$ doping concentration $\ensuremath{\delta}$ and a Nernst effect to signal underlying long-range entanglement between the charge and spin degrees of freedom. Their presence is further reflected in thermodynamic quantities such as specific heat and spin susceptibility. Finally, in the high-temperature spin-disordered phase, it is shown that the holons exhibit linear-$T$ resistivity by scattering with the spinons acting as free local moments, which generate randomized gauge fluxes as perceived by the charge degree of freedom.
Authors
- Zheng-Yu Weng (ORCID: https://orcid.org/0000-0003-1581-3920)
- Jiaxin Zhang (ORCID: https://orcid.org/0000-0002-8631-8794)
- Chuan Chen (ORCID: https://orcid.org/0000-0001-7108-1280)
- Zhijian Song (ORCID: https://orcid.org/0000-0001-9873-216X)
Institutions
- Lanzhou University (CN)
- Tsinghua University (CN)
Publication Details
- Journal
- Physical review. B./Physical review. B
- Published
- 2025-04-21
- DOI
- https://doi.org/10.1103/physrevb.111.165138
- Citations
- 2
- Primary Topic
- Physics of Superconductivity and Magnetism
- Type
- article
- Field-Weighted Citation Impact
- 2.52
Funders
- National Natural Science Foundation of China
- Ministry of Science and Technology of the People's Republic of China