Effect of Parasitic Inductance on Switching Transition for Four-Quadrant SiC-Based Current Source Inverter

The four quadrant (FQ) switch is used in current source inverter (CSI) as it possesses reverse voltage blocking (RVB) characteristics which is a basic requirement for CSI. The FQ switch can be realized using two SiC-MOSFETs in anti-series configuration. Due to additional switches used, the designing of FQ switch in printed circuit board (PCB) is a challenge as it increases the power loop inductance. So, to get an optimal power loop, several calculated loop inductances are considered for observation and simulated using LT spice application. This paper shows the effect in switching transition behavior of FQ switch due to various loop inductance. It also compares the behavior of gate to source voltage by varying the gate loop inductance.