High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication
We report on the demonstration of an InGaP/AlGaAs heterojunction avalanche photodiode (APD) with an aluminum composition of 0.8, optimized for high-speed visible-light detection. The APD achieves a 3-dB bandwidth of 2.25 GHz at a multiplication gain of 72, corresponding to a gain–bandwidth product (GBP) of 162 GHz. It exhibits low dark current, low excess noise, and high multiplication gain, highlighting its suitability for high-performance optical applications. To showcase its potential, we integrated the APD into a visible-light communication system with a GaN micro-LED transmitter, achieving a data rate exceeding 1063 Mb/s. These findings highlight the promise of InGaP/AlGaAs APDs for advancing high-speed visible-light communication technologies.
Authors
- Pengfei Tian (ORCID: https://orcid.org/0000-0001-8479-2727)
- Daqi Shen
- Baile Chen (ORCID: https://orcid.org/0000-0002-3265-5787)
- Zhecheng Dai (ORCID: https://orcid.org/0000-0003-3052-8044)
- Hai‐Ming Ji
- Xiangyang Chen (ORCID: https://orcid.org/0000-0002-6782-9775)
- Jingyi Wang (ORCID: https://orcid.org/0000-0003-4076-4630)
- Y. Fan (ORCID: https://orcid.org/0009-0003-3665-4778)
- Wenyang Wang
Institutions
- Fudan University (CN)
- ShanghaiTech University (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2025-04-21
- DOI
- https://doi.org/10.1109/ted.2025.3559492
- Citations
- 2
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.46