High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication

We report on the demonstration of an InGaP/AlGaAs heterojunction avalanche photodiode (APD) with an aluminum composition of 0.8, optimized for high-speed visible-light detection. The APD achieves a 3-dB bandwidth of 2.25 GHz at a multiplication gain of 72, corresponding to a gain–bandwidth product (GBP) of 162 GHz. It exhibits low dark current, low excess noise, and high multiplication gain, highlighting its suitability for high-performance optical applications. To showcase its potential, we integrated the APD into a visible-light communication system with a GaN micro-LED transmitter, achieving a data rate exceeding 1063 Mb/s. These findings highlight the promise of InGaP/AlGaAs APDs for advancing high-speed visible-light communication technologies.

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Publication Details

Journal
IEEE Transactions on Electron Devices
Published
2025-04-21
DOI
https://doi.org/10.1109/ted.2025.3559492
Citations
2
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
1.46
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article

High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication

Pengfei Tian, Daqi Shen, Baile Chen, Zhecheng Dai et al.
2 citations
IEEE Transactions on Electron Devices
Semiconductor Lasers and Optical Devices
1.46
article

High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication

Pengfei Tian, Daqi Shen, Baile Chen, Zhecheng Dai, Hai‐Ming Ji, Xiangyang Chen, Jingyi Wang, Y. Fan, Wenyang Wang
article en
2 citations

Abstract

We report on the demonstration of an InGaP/AlGaAs heterojunction avalanche photodiode (APD) with an aluminum composition of 0.8, optimized for high-speed visible-light detection. The APD achieves a 3-dB bandwidth of 2.25 GHz at a multiplication gain of 72, corresponding to a gain–bandwidth product (GBP) of 162 GHz. It exhibits low dark current, low excess noise, and high multiplication gain, highlighting its suitability for high-performance optical applications. To showcase its potential, we integrated the APD into a visible-light communication system with a GaN micro-LED transmitter, achieving a data rate exceeding 1063 Mb/s. These findings highlight the promise of InGaP/AlGaAs APDs for advancing high-speed visible-light communication technologies.

IEEE Transactions on Electron DevicesVol. 72(6)
Fudan University (CN), ShanghaiTech University (CN), University of Chinese Academy of Sciences (CN)
Affordable and clean energy
Openalex Percentile: Top 18%
Semiconductor Lasers and Optical Devices
1.46
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