Comparative Analysis of 45nm CMOS Model in Comparison to 6T, 8T, 10T, 12T and 14T SRAM Models

In this growing world of VLSI Chips, world is moving towards extremely compact chips in the near future. As per Moore's Law, the transistors will get doubled every two years and the area will be reduced significantly. Now as time moves, the demand for efficient chips also increases. An ideal chip should have low power consumption, faster speed, lower operating voltage and less area constraints. This paper has a detailed discussion on 6T,8T,10T,12T and 14T SRAM with a main objective on analysing power constraints and the variation of power along with temperature. It has been found out that 10T SRAM has least power usage of about 8.02, μW whereas 6T SRAM uses 100.2, μW. On analysing the power variations w.r.t temperature it has been found that only 10T SRAM increases power consumption with increase in temperature, rest reduces power consumption with increase in temperature.

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Publication Details

Published
2024-12-20
DOI
https://doi.org/10.1109/emergin63207.2024.10961032
Citations
1
Primary Topic
VLSI and Analog Circuit Testing
Type
article
Field-Weighted Citation Impact
0.49
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Comparative Analysis of 45nm CMOS Model in Comparison to 6T, 8T, 10T, 12T and 14T SRAM Models

Monika Dixit, Salil K. Sanyal
1 citations
VLSI and Analog Circuit Testing
0.49
article

Comparative Analysis of 45nm CMOS Model in Comparison to 6T, 8T, 10T, 12T and 14T SRAM Models

Monika Dixit, Salil K. Sanyal
article en
1 citations

Abstract

In this growing world of VLSI Chips, world is moving towards extremely compact chips in the near future. As per Moore's Law, the transistors will get doubled every two years and the area will be reduced significantly. Now as time moves, the demand for efficient chips also increases. An ideal chip should have low power consumption, faster speed, lower operating voltage and less area constraints. This paper has a detailed discussion on 6T,8T,10T,12T and 14T SRAM with a main objective on analysing power constraints and the variation of power along with temperature. It has been found out that 10T SRAM has least power usage of about 8.02, μW whereas 6T SRAM uses 100.2, μW. On analysing the power variations w.r.t temperature it has been found that only 10T SRAM increases power consumption with increase in temperature, rest reduces power consumption with increase in temperature.

Openalex Percentile: Top 31%
VLSI and Analog Circuit Testing
0.49
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