Loss Comparison of GaN, SiC, and IGBT Based Inverters for Low Voltage High Current Two-Wheeler EV Applications

Currently, most of the EV technology either uses Si or SiC devices. With GaN becoming cheaper and more readily available, there is a need to explore the possibility of using GaN-based devices in EVs, especially two-wheelers, because of their low voltage and high current demand. This paper presents a comparative loss analysis (switching loss, conduction loss, and total loss) of various GaN (EPC 2302, EPC 2304 & GS61008), SiC (C3M0025065K), and Si IGBT (IKW50N60H3) based 2-level and 3-level (ANPC and T-Type) inverters fed motor load of 10kW, 120VL-L, 60A load. The loss analysis of the different switches and converter topologies was done in MATLAB/SIMULINK and PLEXIM software. The study reveals that 3-level topologies with GaN devices are much superior to other topologies. Compact packaging of GaN devices, in addition to reduced losses and hence lesser heat generated, will reduce the requirement for heat sinks, which can further result in a significant reduction of the inverter space requirement for EV applications.