Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800- and 4500-V SiC Power MOSFETs

Experimental heavy-ion responses of two variants of SiC power MOSFETs are evaluated. The devices have similar epitaxial thickness but different doping. The higher doping in the epitaxial region results in lower breakdown voltage, and typically leads to a lower threshold drain voltage at which single-event leakage current (SELC) occurs. Furthermore, the heavy-ion-induced SELC degradation in the drain and gate currents of the SiC MOSFETs exhibit a strong dependence on the heavy-ion’s angle of incidence. The devices’ behavior significantly alters when irradiated with heavy-ions at different incident angles under the same fixed bias and total fluence, as also confirmed by 3-D Technology Computer Aided Design (TCAD) simulations.

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Publication Details

Journal
IEEE Transactions on Nuclear Science
Published
2025-04-21
DOI
https://doi.org/10.1109/tns.2025.3563110
Citations
1
Primary Topic
Radiation Effects in Electronics
Type
article
Field-Weighted Citation Impact
0.73

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article

Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800- and 4500-V SiC Power MOSFETs

Dennis R. Ball, K.F. Galloway, Ulrike Großner, Arthur F. Witulski et al.
1 citations
IEEE Transactions on Nuclear Science
Radiation Effects in Electronics
0.73
article

Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800- and 4500-V SiC Power MOSFETs

Dennis R. Ball, K.F. Galloway, Ulrike Großner, Arthur F. Witulski, Jason M. Osheroff, C. Martinella, Arto Javanainen, Ronald D. Schrimpf, Arijit Sengupta, H. Kettunen, John M. Hutson, A. S. Senarath, S. Islam, K. Niskanen, Andrew L. Sternberg, P. M. Harris, S.L. Kosier
article en
1 citations

Abstract

Experimental heavy-ion responses of two variants of SiC power MOSFETs are evaluated. The devices have similar epitaxial thickness but different doping. The higher doping in the epitaxial region results in lower breakdown voltage, and typically leads to a lower threshold drain voltage at which single-event leakage current (SELC) occurs. Furthermore, the heavy-ion-induced SELC degradation in the drain and gate currents of the SiC MOSFETs exhibit a strong dependence on the heavy-ion’s angle of incidence. The devices’ behavior significantly alters when irradiated with heavy-ions at different incident angles under the same fixed bias and total fluence, as also confirmed by 3-D Technology Computer Aided Design (TCAD) simulations.

IEEE Transactions on Nuclear ScienceVol. 72(8)
Goddard Space Flight Center (US), Lipscomb University (US), Vanderbilt University (US), Advanced Power Electronics (United States) (US), University of Jyväskylä (FI)
European Commission, Goddard Space Flight Center
Openalex Percentile: Top 29%
Radiation Effects in Electronics
0.73
DOIOpen Access PDFOpenAlex
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