On-State Voltage Sensing of Fast-Switching Power Transistors: Evaluation, Challenges, and Advanced Design Considerations

The fast and accurate sensing of the on-state voltage is a vital part of power semiconductor device characterization. While there are many different approaches and circuits in the literature, the results are often difficult to compare, obstructing the evaluation process. To allow a conclusive comparison with other circuits, a comprehensive evaluation approach to assess and compare on-state voltage measurement circuits is proposed. Additionally, two custom clamping circuits are proposed and evaluated with the developed benchmarking scheme. The circuits reach 3-dB frequencies of 56.7 MHz and 250.9 MHz and average reaction times of 41.1 ns and 23.1 ns, respectively, and can be used for the characterization of 1200 V power devices.

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Publication Details

Journal
IEEE Transactions on Power Electronics
Published
2025-04-21
DOI
https://doi.org/10.1109/tpel.2025.3562955
Citations
2
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
1.46
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article

On-State Voltage Sensing of Fast-Switching Power Transistors: Evaluation, Challenges, and Advanced Design Considerations

Ingmar Kallfass, Mathias C. J. Weiser, Jan Tausk
2 citations
IEEE Transactions on Power Electronics
Advancements in Semiconductor Devices and Circuit Design
1.46
article

On-State Voltage Sensing of Fast-Switching Power Transistors: Evaluation, Challenges, and Advanced Design Considerations

Ingmar Kallfass, Mathias C. J. Weiser, Jan Tausk
article en
2 citations

Abstract

The fast and accurate sensing of the on-state voltage is a vital part of power semiconductor device characterization. While there are many different approaches and circuits in the literature, the results are often difficult to compare, obstructing the evaluation process. To allow a conclusive comparison with other circuits, a comprehensive evaluation approach to assess and compare on-state voltage measurement circuits is proposed. Additionally, two custom clamping circuits are proposed and evaluated with the developed benchmarking scheme. The circuits reach 3-dB frequencies of 56.7 MHz and 250.9 MHz and average reaction times of 41.1 ns and 23.1 ns, respectively, and can be used for the characterization of 1200 V power devices.

IEEE Transactions on Power ElectronicsVol. 40(9)
University of Stuttgart (DE)
Affordable and clean energy
Openalex Percentile: Top 18%
Advancements in Semiconductor Devices and Circuit Design
1.46
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