Design and Analysis of Wide Bandgap device based DAB Converter for EV On-Board Chargers

This paper focused on design and simulation of 3.3 kW, 400V DC output, Gallium nitride high electron mobility transistors (GaN-HEMT) based Dual Active Bridge (DAB) DC-DC Converter for EV On-board Chargers (OBC). An optimized design of converter with high power density and high efficiency is proposed. GaN-HEMT and Planar Transformer are selected to achieve high power density due to its compact size and high switching frequency. Proposed GaN based converter design, overall component selection, modes of operation and control strategies are discussed in details. The simulation of proposed converter is carried out in Plexim software. The performance analysis of GaN based DAB and SiC based DAB are presented in Plexim software. The overall device losses of both converters are compared and presented.