A Novel Substrate-Embedded SiC Power Module With Integrated Liquid Cooling

To fully leverage the advantages of silicon carbide (SiC) power devices, this study presents a substrate-embedded SiC power module with integrated liquid cooling. Four 1.2 kV SiC MOSFETs are embedded in an organic substrate and cooled via a direct bonded microchannel heatsink, within a packaging size of 20mm×20mm×2.4mm. This design achieves short electrical interconnection with significantly reduced parasitic parameters, and eliminates the need for thermal interface material (TIM), enhancing cooling efficiency. Through careful optimization, the parasitic inductances of the power loop and driving loop are minimized to below 155pH and 35pH, respectively. The proposed module outperforms the commercial TO-247-4 packaging, exhibiting faster switching speeds with turn-on and turn-off losses decreased by 12.7% and 10%, respectively. Furthermore, at a junction temperature rise of 150<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$^{\circ }$</tex-math></inline-formula> C, the die heat flux of the embedded module exceeds that of the TO-247-4 with external air cooling by 29.1% and with liquid cooling by 7.6%. In addition, due to the significant size advantage of the proposed module, the improvement in packaging heat flux is more pronounced.