Enhancing Reliability in Ferroelectric ScAlN Non-Volatile Memory With AlOₓ Layer Insertion

Ferroelectric non-volatile memory (FeNVM) is gaining significant attention for its potential applications in data storage and neuromorphic computing. Among the promising materials for next-generation FeNVM, scandium aluminum nitride (ScAlN), has garnered attention due to its favorable ferroelectric properties and compatibility with existing Si and GaN semiconductor platforms, as well as CMOS technology. However, current ScAlN-based FeNVMs have been limited by a low V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">b</sub>/V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sw</sub> (breakdown voltage to polarization switching voltage ratio) figure of merit (FOM) and inadequate endurance, hindering their widespread adoption. To overcome these limitations, we proposed an innovative ScAlN FeNVM architecture that incorporates an AlO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> interlayer deposited via atomic layer deposition (ALD). This strategic addition significantly enhances the device’s performance, achieving a competitive V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">b</sub>/V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sw</sub> FOM of 1.7 and extending the endurance to up to 106 write-erase cycles. Furthermore, our design demonstrates scalability, as evidenced by the successful integration of a 20-nm-thick ScAlN layer, which supports high-density integration in future devices.