Enhancing InGaN Solar Cell Performance Under Concentrated Sunlight: A SCAPS‐1D Simulation Approach

ABSTRACT This study investigates the effects of concentrated sunlight on the performance of (PPN) solar cells. We explore five InGaN‐based PPN solar cell configurations, characterized by varying indium mole fractions (), using SCAPS‐1D software. The analysis covers a wide range of ambient temperatures (300–800 K) and solar irradiances (1–100 ). This research marks the first simulation of concentrated sunlight effects on PPN InGaN solar cells using SCAPS‐1D. We compare our findings against established solar cell configurations, including and p‐GaAs/n‐GaAs. Our results reveal that PPN InGaN solar cells demonstrate exceptional performance, particularly under elevated temperatures and concentrated light. Notably, the power density of the configuration reaches 1111 at 100 000 and 800 K, significantly outperforming the 26 observed at 1000 and 300 K. This pioneering work highlights the resilience and high‐performance capabilities of PPN InGaN solar cells under intense sunlight conditions.