Low-power V<sub>AQ</sub>-based one-side switching scheme for SAR ADCs

A VAQ-based DAC switching scheme is proposed to improve the power efficiency of SAR ADCs. The input signals are sampled onto bottom-plates of the most significant bit (MSB) capacitors, thereby eliminating the reset energy. The reference voltage VCM rather than VREF is switched during the third-bit cycle, thus significantly reducing the power consumption. Additionally, an energy-efficient one-sided switching technique is employed from the fourth-bit cycle. This proposed switching scheme achieves a 99.51% reduction in switching energy over the classic scheme. The ADC with the proposed switching scheme is designed in 0.18-μm CMOS technology. It consumes 37.7 nW at a sampling rate of 20 KS/s and 0.6 V supply, and achieves the ENOB of 9.59 bits, resulting in a figure of merit (FOM) of 2.45 fJ/conversion-step.

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Publication Details

Journal
IEICE Electronics Express
Published
2025-04-21
DOI
https://doi.org/10.1587/elex.22.20250140
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
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article

Low-power VAQ-based one-side switching scheme for SAR ADCs

Hao Wang, Huang Conggui, Zhuang Haoyu
IEICE Electronics Express
Advanced Memory and Neural Computing
article

Low-power VAQ-based one-side switching scheme for SAR ADCs

Hao Wang, Huang Conggui, Zhuang Haoyu
article en

Abstract

A VAQ-based DAC switching scheme is proposed to improve the power efficiency of SAR ADCs. The input signals are sampled onto bottom-plates of the most significant bit (MSB) capacitors, thereby eliminating the reset energy. The reference voltage VCM rather than VREF is switched during the third-bit cycle, thus significantly reducing the power consumption. Additionally, an energy-efficient one-sided switching technique is employed from the fourth-bit cycle. This proposed switching scheme achieves a 99.51% reduction in switching energy over the classic scheme. The ADC with the proposed switching scheme is designed in 0.18-μm CMOS technology. It consumes 37.7 nW at a sampling rate of 20 KS/s and 0.6 V supply, and achieves the ENOB of 9.59 bits, resulting in a figure of merit (FOM) of 2.45 fJ/conversion-step.

IEICE Electronics ExpressVol. 22(11)
University of Electronic Science and Technology of China (CN), Wuxi Institute of Technology (CN)
Openalex Percentile: Top 94%
Advanced Memory and Neural Computing
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Low-power V<sub>AQ</sub>-based one-side switching scheme for SAR ADCs — Hao Wang, Huang Conggui, et al. · IEICE Electronics Express (2025) | TGRS Research Map | TGRS