Superconducting nanowire single-photon detectors based on amorphous tungsten germanide

In this Letter, we characterized superconducting nanowire single-photon detectors (SNSPDs) based on amorphous tungsten germanide (W0.8Ge0.2) superconducting films, which exhibit superconducting properties comparable to those of amorphous WSi. The nanowire width ranges from 60 to 90 nm, with a fixed filling factor of 30%. All fabricated devices exhibit saturated intrinsic detection efficiency for infrared photons with wavelengths up to 2 μm, indicating that WGe is a promising candidate for SNSPDs designed for mid- and far-infrared photon detection. The timing jitter of these detectors, measured with a room-temperature amplifier, ranges from 127 to 234.5 ps. Further improvements can be achieved through device geometry optimization or the implementation of cryogenic amplifiers.

Authors

Institutions

Publication Details

Journal
Applied Physics Letters
Published
2025-04-21
DOI
https://doi.org/10.1063/5.0264958
Citations
2
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
1.46

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Superconducting nanowire single-photon detectors based on amorphous tungsten germanide

Xiaofu Zhang, Lixing You, Ruoyan Ma, Yangmu Li et al.
2 citations
Applied Physics Letters
Advanced Semiconductor Detectors and Materials
1.46
article

Superconducting nanowire single-photon detectors based on amorphous tungsten germanide

Xiaofu Zhang, Lixing You, Ruoyan Ma, Yangmu Li, Wei Peng, Jia Huang, Shi‐Jie Yang, Jia-Min Xiong, Hui Zhou, Limin Sun, Hao Li, Ying Chen, Zhen Wan, Xiaoyu Liu, Xiaoqing Zheng, Jihong Zheng
article en
2 citations

Abstract

In this Letter, we characterized superconducting nanowire single-photon detectors (SNSPDs) based on amorphous tungsten germanide (W0.8Ge0.2) superconducting films, which exhibit superconducting properties comparable to those of amorphous WSi. The nanowire width ranges from 60 to 90 nm, with a fixed filling factor of 30%. All fabricated devices exhibit saturated intrinsic detection efficiency for infrared photons with wavelengths up to 2 μm, indicating that WGe is a promising candidate for SNSPDs designed for mid- and far-infrared photon detection. The timing jitter of these detectors, measured with a room-temperature amplifier, ranges from 127 to 234.5 ps. Further improvements can be achieved through device geometry optimization or the implementation of cryogenic amplifiers.

Applied Physics LettersVol. 126(16)
University of Shanghai for Science and Technology (CN), Chinese Academy of Sciences (CN), Physical Sciences (United States) (US), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), Shanghai Institute of Microsystem and Information Technology (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, National Key Research and Development Program of China
Openalex Percentile: Top 18%
Advanced Semiconductor Detectors and Materials
1.46
DOISourceOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.