Unlocking the phase evolution of the hidden non-polar to ferroelectric transition in HfO2-based bulk crystals

The discovery of ferroelectricity in hafnium dioxide (HfO<sub>2</sub>) thin films over the past decade has revolutionized the landscape of ferroelectrics, providing a promising candidate for next-generation ferroelectrics beyond the constraints of Moore's law. However, the underlying formation mechanism of their metastable and volatile ferroelectric phase is under debate. Herein, we successfully grow HfO<sub>2</sub>-based (Lu:Hf<sub>1-x</sub>Zr<sub>x</sub>O<sub>2</sub>) bulk crystals and gain a comprehensive understanding of the non-polar to ferroelectric phase evolution. We achieve a controllable polymorphic engineering by elucidating the synergistic modulation of co-doped Lu<sup>3+</sup> and Zr<sup>4+</sup> ions. Our investigation unveils the intricate local structural transitions involved in the formation of the ferroelectric orthorhombic Pbc2<sub>1</sub> phase from the metastable tetragonal phase. We also establish a controllable tetragonal-to-orthorhombic transformation route, effectively improving the ferroelectric phase component within bulk crystals. Our findings will advance the comprehension of ferroelectric mechanisms in fluorite-structured materials, paving the way for significant strides in developing HfO<sub>2</sub>-based nonvolatile electronic and photonic devices.

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Publication Details

Journal
Nature Communications
Published
2025-04-21
DOI
https://doi.org/10.1038/s41467-025-59018-4
Citations
10
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
7.30

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article

Unlocking the phase evolution of the hidden non-polar to ferroelectric transition in HfO2-based bulk crystals

Xiaoyu Yang, Huaijin Zhang, Yihao Shen, Binghui Ge et al.
10 citations
Nature Communications
Ferroelectric and Negative Capacitance Devices
7.30
article

Unlocking the phase evolution of the hidden non-polar to ferroelectric transition in HfO2-based bulk crystals

Xiaoyu Yang, Huaijin Zhang, Yihao Shen, Binghui Ge, Haohai Yu, Shuxian Wang, Shujun J. Zhang, Ning Lü, Y.‐L. He, Pengfei Nan
article en
10 citations

Abstract

The discovery of ferroelectricity in hafnium dioxide (HfO<sub>2</sub>) thin films over the past decade has revolutionized the landscape of ferroelectrics, providing a promising candidate for next-generation ferroelectrics beyond the constraints of Moore's law. However, the underlying formation mechanism of their metastable and volatile ferroelectric phase is under debate. Herein, we successfully grow HfO<sub>2</sub>-based (Lu:Hf<sub>1-x</sub>Zr<sub>x</sub>O<sub>2</sub>) bulk crystals and gain a comprehensive understanding of the non-polar to ferroelectric phase evolution. We achieve a controllable polymorphic engineering by elucidating the synergistic modulation of co-doped Lu<sup>3+</sup> and Zr<sup>4+</sup> ions. Our investigation unveils the intricate local structural transitions involved in the formation of the ferroelectric orthorhombic Pbc2<sub>1</sub> phase from the metastable tetragonal phase. We also establish a controllable tetragonal-to-orthorhombic transformation route, effectively improving the ferroelectric phase component within bulk crystals. Our findings will advance the comprehension of ferroelectric mechanisms in fluorite-structured materials, paving the way for significant strides in developing HfO<sub>2</sub>-based nonvolatile electronic and photonic devices.

Nature CommunicationsVol. 16(1)
Anhui University (CN), Shandong University (CN), University of Wollongong (AU), Crystal Research (United States) (US)
Shandong University, National Natural Science Foundation of China, University of Jinan, Natural Science Foundation of Shandong Province, Young Scientists Fund, National Key Research and Development Program of China
Openalex Percentile: Top 3%
Ferroelectric and Negative Capacitance Devices
7.30
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