Elimination of Edge Defects in SiC Crystals Grown Through Physical Vapor Transport Method

Abstract Silicon carbide (SiC) has important application prospects in power and radio frequency devices. Obtaining SiC crystals with large diameters and high quality is still a challenge. In this work, the temperature field during SiC crystal growth is investigated through the physical vapor transport (PVT) method. Based on the numerical simulated results, an improved growing system is designed and perfect SiC crystals without any edge defects are successfully obtained. Furthermore, the X‐ray rocking curve, electrical resistivity, and dislocation density of the obtaining SiC crystals are evaluated.