Pressure-induced metallization and Lifshitz transition in quasi-one-dimensional TiSe <sub>3</sub> single crystal
Abstract The transition metal trichalcogenides (TMTs) with quasi-one-dimensional (quasi-1D) layered crystal structure represent a unique platform to explore intriguing physical properties. Herein, we report the successful growth of a new TMT TiSe 3 single crystal by using a high-pressure and high-temperature technique. The crystal structure of TiSe 3 was determined by measuring the single-crystal x-ray diffraction and selected area electron diffraction. The 1D chain-like structure along the b -axis is formed by the TiSe 6 prisms which share their tops and bottoms with each other. TiSe 3 is a narrow band gap semiconductor with electron-type carriers under ambient conditions identified by the electrical and Hall effect measurements. It exhibits a pressure-induced semiconductor-to-metal transition around 4 GPa. As the pressure further increases to ∼ 6 GPa, a pressure-induced Lifshitz transition occurs, as indicated by the electrical transport measurements, high-pressure crystal structure characterizations, and electronic band structure calculations.
Authors
- Yunguan Ye (ORCID: https://orcid.org/0009-0000-1647-9771)
- Yanfeng Guo (ORCID: https://orcid.org/0000-0002-9386-4857)
- Zhiwei Shen (ORCID: https://orcid.org/0000-0003-3386-1520)
- Zhenhai Yu (ORCID: https://orcid.org/0000-0001-6723-116X)
- C. S. Chu (ORCID: https://orcid.org/0000-0002-1050-761X)
- Pengtao Yang (ORCID: https://orcid.org/0000-0001-9397-8734)
- Liu-Cheng Chen (ORCID: https://orcid.org/0000-0002-8066-2789)
- Jun Li (ORCID: https://orcid.org/0000-0002-1086-6508)
- Yiming Wang (ORCID: https://orcid.org/0000-0003-0513-9039)
- Ziyi Liu (ORCID: https://orcid.org/0000-0002-5561-3889)
- Xia Wang
- Mingtao Li (ORCID: https://orcid.org/0000-0002-7171-5252)
- Chenglin Li (ORCID: https://orcid.org/0000-0002-2569-2897)
- Shaojie Wang (ORCID: https://orcid.org/0000-0002-2786-519X)
- Jian Yuan (ORCID: https://orcid.org/0000-0003-1398-3950)
- Wenge Yang
- Lin Wang (ORCID: https://orcid.org/0000-0003-3033-4792)
Institutions
- Chinese Academy of Sciences (CN)
- ShanghaiTech University (CN)
- Yanshan University (CN)
- Center for High Pressure Science and Technology Advanced Research (CN)
- Institute of Physics (CN)
- National Laboratory for Superconductivity (CN)
Publication Details
- Journal
- Chinese Physics B
- Published
- 2025-04-21
- DOI
- https://doi.org/10.1088/1674-1056/adce9d
- Citations
- 2
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 1.04