Hermetic Package-Based 45 W Ku-Band GaN HPA MMIC for Aerospace Applications

This paper presents the design and test results of a 45 W high-power amplifier monolithic-microwave integrated circuit (HPA MMIC) for aerospace applications utilizing a 0.15 μmGaN on SiC process, as well as the test results after applying a metal-ceramic-based hermetic package. The fabricated MMIC was designed with a three-stage cascade structure to achieve a high gain in both small- and large-signal performances. Measurements were conducted under radio-frequency pulse signal conditions with a 100 μs pulse width and 10 %duty cycle for both the MMIC die and hermetically packaged MMIC. The MMIC die operates in the 14~16 GHz band, delivering an output power of 46.7 dBm, a power-added efficiency (PAE) of 35.6 %, and a power gain of 23.7 dB. The hermetically packaged MMIC exhibited an output power of 45 W, a PAE of 30 %, and a power gain of 24.3 dB. The chip size of the fabricated MMIC was 4.5 × 4.5 mm2, and the size of the hermetic package was 10 × 12 mm2, making it suitable for use in the transmitter modules of aerospace wireless systems that require high power, light weight, and high reliability.

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Publication Details

Journal
The Journal of Korean Institute of Electromagnetic Engineering and Science
Published
2025-03-01
DOI
https://doi.org/10.5515/kjkiees.2025.36.3.236
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Hermetic Package-Based 45 W Ku-Band GaN HPA MMIC for Aerospace Applications

Youngwan Lee, H.S. Kang, Changmin Kim
The Journal of Korean Institute of Electromagnetic Engineering and Science
GaN-based semiconductor devices and materials
article

Hermetic Package-Based 45 W Ku-Band GaN HPA MMIC for Aerospace Applications

Youngwan Lee, H.S. Kang, Changmin Kim
article en

Abstract

This paper presents the design and test results of a 45 W high-power amplifier monolithic-microwave integrated circuit (HPA MMIC) for aerospace applications utilizing a 0.15 μmGaN on SiC process, as well as the test results after applying a metal-ceramic-based hermetic package. The fabricated MMIC was designed with a three-stage cascade structure to achieve a high gain in both small- and large-signal performances. Measurements were conducted under radio-frequency pulse signal conditions with a 100 μs pulse width and 10 %duty cycle for both the MMIC die and hermetically packaged MMIC. The MMIC die operates in the 14~16 GHz band, delivering an output power of 46.7 dBm, a power-added efficiency (PAE) of 35.6 %, and a power gain of 23.7 dB. The hermetically packaged MMIC exhibited an output power of 45 W, a PAE of 30 %, and a power gain of 24.3 dB. The chip size of the fabricated MMIC was 4.5 × 4.5 mm2, and the size of the hermetic package was 10 × 12 mm2, making it suitable for use in the transmitter modules of aerospace wireless systems that require high power, light weight, and high reliability.

The Journal of Korean Institute of Electromagnetic Engineering and ScienceVol. 36(3)
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GaN-based semiconductor devices and materials
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