<i>In situ</i> preparation of a PHI/SnS <sub>2</sub> heterojunction photoanode towards photoelectrochemical applications

A PHI/SnS 2 heterojunction with the photocurrent density of 880 μA cm −2 was constructed by combination of electrochemical deposition and CVD.

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Publication Details

Journal
New Journal of Chemistry
Published
2025-01-01
DOI
https://doi.org/10.1039/d5nj00625b
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00
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article

In situ preparation of a PHI/SnS 2 heterojunction photoanode towards photoelectrochemical applications

Doudou Zhang, Panpan Sun, Xiaohua Sun, Xiaowei Lv et al.
New Journal of Chemistry
Chalcogenide Semiconductor Thin Films
article

In situ preparation of a PHI/SnS 2 heterojunction photoanode towards photoelectrochemical applications

Doudou Zhang, Panpan Sun, Xiaohua Sun, Xiaowei Lv, Zeyao He
article en

Abstract

A PHI/SnS 2 heterojunction with the photocurrent density of 880 μA cm −2 was constructed by combination of electrochemical deposition and CVD.

New Journal of ChemistryVol. 49(21)
China Three Gorges University (CN)
Openalex Percentile: Top 94%
Chalcogenide Semiconductor Thin Films
DOISourceOpenAlex
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<i>In situ</i> preparation of a PHI/SnS <sub>2</sub> heterojunction photoanode towards photoelectrochemical applications — Doudou Zhang, Panpan Sun, et al. · New Journal of Chemistry (2025) | TGRS Research Map | TGRS