Multiscale Simulation of Capacitively Coupled Ar/CHF <sub>3</sub> Discharges Driven by Sawtooth‐Tailored Voltage Waveforms

ABSTRACT Multiscale simulation in capacitively coupled Ar/CHF 3 plasmas driven by sawtooth‐up waveforms are conducted based on a one‐dimensional fluid/Monte‐Carlo (MC) model coupled with an etching profile evolution model. By increasing numbers of consecutive harmonics, N , a transition of the discharge mode from the Drift‐Ambipolar (DA) to an α‐DA hybrid mode can be observed. As the CHF 3 gas admixture increases, the electronegativity initially increases and then decreases, following a similar trend as the absolute value of the DC self‐bias voltage. Moreover, placing the substrate on the grounded electrode of a geometrically symmetric reactor and using a higher N can result in a higher etching rate, since ion fluxes are higher in these scenarios. Additionally, selecting an appropriate gas mixture is also essential.

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Publication Details

Journal
Plasma Processes and Polymers
Published
2025-04-20
DOI
https://doi.org/10.1002/ppap.70026
Citations
4
Primary Topic
Plasma Diagnostics and Applications
Type
article
Field-Weighted Citation Impact
2.92
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article

Multiscale Simulation of Capacitively Coupled Ar/CHF 3 Discharges Driven by Sawtooth‐Tailored Voltage Waveforms

Julian Schulze, Wan Dong, Li Wang, Yuan‐Hong Song et al.
4 citations
Plasma Processes and Polymers
Plasma Diagnostics and Applications
2.92
article

Multiscale Simulation of Capacitively Coupled Ar/CHF 3 Discharges Driven by Sawtooth‐Tailored Voltage Waveforms

Julian Schulze, Wan Dong, Li Wang, Yuan‐Hong Song, Yifan Zhang, L. Q. Song
article en
4 citations

Abstract

ABSTRACT Multiscale simulation in capacitively coupled Ar/CHF 3 plasmas driven by sawtooth‐up waveforms are conducted based on a one‐dimensional fluid/Monte‐Carlo (MC) model coupled with an etching profile evolution model. By increasing numbers of consecutive harmonics, N , a transition of the discharge mode from the Drift‐Ambipolar (DA) to an α‐DA hybrid mode can be observed. As the CHF 3 gas admixture increases, the electronegativity initially increases and then decreases, following a similar trend as the absolute value of the DC self‐bias voltage. Moreover, placing the substrate on the grounded electrode of a geometrically symmetric reactor and using a higher N can result in a higher etching rate, since ion fluxes are higher in these scenarios. Additionally, selecting an appropriate gas mixture is also essential.

Plasma Processes and PolymersVol. 22(7)
Dalian University of Technology (CN)
Openalex Percentile: Top 9%
Plasma Diagnostics and Applications
2.92
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