Modulated strain-induced boron pnictides (BX, X=N, P, As and Sb) monolayer for supercapacitor applications

After the discovery of 2D graphene, more research on 2D materials is taking place due to its high surface-to-volume ratio for energy storage. In this study, we applied the biaxial strain from [Formula: see text]10% to 10% with a difference of 2% on boron pnictides (BN, BP, BAs and BSb) materials and found its quantum capacitance ([Formula: see text]) for supercapacitor electrodes. Our research reveals that owing to the BN large band gap, maximum [Formula: see text] is achieved at 271.32[Formula: see text] [Formula: see text]F/cm 2 at free strain (0%) and will be lowered during compression and tensile strain. The greatest C Q for BP is attained by 197.98[Formula: see text] [Formula: see text]F/cm 2 for [Formula: see text]10% compressive strain, and this value is 34.42% greater than the free strain [Formula: see text]. For BAs and BSb, the greatest [Formula: see text] reached was 237.50 and 280.15[Formula: see text] [Formula: see text]F/cm 2 , respectively, at 10% tensile strain. This [Formula: see text] is 59.60% and 108.35% higher than the free strain for BAs and BSb, respectively. We also explore the surface storage charge to specify the kind of electrode for energy storage applications. From ultimate tensile strength curve (UTSR), we obtain a BN structure that has more flexibility than other structures.