A New Method of Industrial Passivation for Characterization of Surface Defects in Silicon‐Based Materials or Solar Cell Precursors

Accurate defect passivation is critical for characterizing intrinsic carrier lifetimes in semiconductor materials, as surface defects induce recombination centers that distort lifetime measurements. While conventional passivation coatings (e.g., SiO 2 , SiN x , Al 2 O 3 , a‐Si:H(i)) require complex high‐temperature/vacuum processes, this work proposes an innovative low‐temperature solution‐based approach utilizing organic passivation materials. The Nafion/Polystyrene sulfonic acid‐based system achieves electrochemical interaction between sulfonic groups (SO 3 − ) and silicon dangling bonds, forming interfacial silicon oxides that effectively neutralize trap states. This versatile technique accommodates multiple deposition methods—including spin coating, blade coating, spraying, and brush coating—without vacuum requirements. Demonstrated for silicon, CuInxGa(1‐x)Se2, and perovskite thin films, the solution‐processed passivation enables rapid, large‐area characterization while maintaining exceptional stability. The combined advantages of ambient processing conditions, material compatibility, and scalability position this methodology as a cost‐effective industrial solution for high‐throughput semiconductor evaluation.