Demonstration of thermoelectrically cooled MWIR InAs/GaSb focal plane arrays

Thermoelectrically cooled focal plane arrays (FPAs) for the mid-wavelength infrared spectral range have been demonstrated. The mesa-shaped pixels were formed in pin InAs/GaSb heterostructure using dry etching. FPA with 320 × 256 resolution and a pixel pitch of 30 μm was obtained. Indium die-bonding was applied to connect FPA and a read-out integrated circuit. The thermoelectrically cooled hybrid was hermetically sealed in a vacuum housing with a silicon window. The pictures of the hot soldering tip were detected using FPA at different temperatures. • Focal plane array based on MWIR type II InAs/GaSb superlattice. • Photosensitive focal plane array mounted on thermoelectric cooler. • Focal plane array designed for HOT conditions. • Focal plane array utilising thermoelectric cooler push the SWaP-C criterion. • Images of hot soldering iron tip started to degrade at FPA temperature above 262 K.