IONIC CLEANING OF GE SUBSTRATE SURFACES BEFORE ION BEAM SPOILING OF THIN FILMS

Optimal parameters for ion cleaning of semiconductor materials have been determined on the basis of the Aspira-200 vacuum deposition system using the example of a Ge monocrystal. The characteristic sizes of breakdown craters on the semiconductor surface have been determined for insufficient (0.8-1.8 µm) and excessive (12-25 µm) charge compensation from the ion cleaning source. The compensation coefficient, at which no breakdowns occur on the surface of the Ge monocrystal, has been found from the volt-ampere characteristics. It has been established that at optimal parameters, the substrate heating does not affect the result of ion cleaning.