Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs

We propose a detailed approach for modeling the C-V characteristic of complex heterostructure-based devices, investigating the case of UV-C LEDs. The study is based on combined experimental measurements and TCAD simulations, and explores: i) the impact of defects at critical interfaces on the apparent charge profile; ii) the dependence of the C-V characteristic on the efficiency of carrier injection toward the QWs; iii) the impact of a non-ideal partially-rectifying p-contact on the C-V curves. By accounting for these processes and non-idealities, we were able to achieve a good reproduction of the experimental C-V characteristic and of the corresponding apparent charge profile. The result presented in this paper provide relevant information for the investigation of specific device features, based on simple electrical characterizations.

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Publication Details

Journal
Scientific Reports
Published
2025-04-18
DOI
https://doi.org/10.1038/s41598-025-95015-9
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26

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Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs

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Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs

Enrico Zanoni, Michael Kneissl, Nicola Trivellin, Matteo Buffolo, Nicola Roccato, Matteo Meneghini, Jakob Höpfner, Carlo De Santi, Martin Guttmann, Francesco Piva, Tim Wernicke, Anton Muhin, Gaudenzio Meneghesso, Marcel Schilling
article en
1 citations

Abstract

We propose a detailed approach for modeling the C-V characteristic of complex heterostructure-based devices, investigating the case of UV-C LEDs. The study is based on combined experimental measurements and TCAD simulations, and explores: i) the impact of defects at critical interfaces on the apparent charge profile; ii) the dependence of the C-V characteristic on the efficiency of carrier injection toward the QWs; iii) the impact of a non-ideal partially-rectifying p-contact on the C-V curves. By accounting for these processes and non-idealities, we were able to achieve a good reproduction of the experimental C-V characteristic and of the corresponding apparent charge profile. The result presented in this paper provide relevant information for the investigation of specific device features, based on simple electrical characterizations.

Scientific ReportsVol. 15(1)
University of Padua (IT), Ferdinand-Braun-Institut (DE), Technische Universität Berlin (DE)
European Commission, Ministero dell'Università e della Ricerca
Affordable and clean energy
Openalex Percentile: Top 22%
GaN-based semiconductor devices and materials
1.26
DOIOpen Access PDFOpenAlex
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