Ferroelectric Assisted Programmable Carrier Stored Layer for Ultralow Turn-Off Loss LIGBTs

This work represents the first exploration of ferroelectric HfZrO (HZO) in lateral insulated gate bipolar transistors (LIGBTs), introducing a novel approach to reduce turn-off loss by incorporating a separate ferroelectric control electrode on the carrier stored layer (CSL). Utilizing the unique properties of ferroelectric HZO, such as its non-volatile nature and strong polarization field, the proposed Fe-controlled CSL enables dynamic modulation of carrier concentration in the LIGBT structure. This novel design demonstrates a remarkable 73.6% and 64.9% reduction in turn-off loss (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">E</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>off</roman></sub>) compared to conventional CSL LIGBT and shorted anode LIGBT, respectively, while maintaining the same ON-state voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>on</roman></sub>). Comprehensive characterization of the HZO material confirms its excellent ferroelectric properties, including high remnant polarization, exceptional endurance, and robust data retention capability. Simulation analysis of the carrier concentration distribution reveals the mechanism of Fe-controlled CSL modulation on carrier distribution. This innovative Fe-controlled CSL technology provides a new pathway to overcome the trade-off between conduction and turn-off characteristics in conventional LIGBT devices, paving the way for the development of high-performance power devices with great application prospects in fields requiring high power density integration.