Depending the structural and optical properties of ZnTe thin films on Cd doping by thermal evaporation

In this paper, pure ZnTe films doped with Cd were prepared by the thermal evaporation method in a vacuum and deposited on glass bases at a temperature (300°k) and thickness (300±20) nm. Then annealing was performed at different temperatures (250 and 350) °C for one hour. The effects of thickness and annealing temperature on the prepared films were studied. The X-ray measurements XRD results showed that all the films, whether they were pure or doped, had polycrystalline and cubic crystal structures and appeared to include some Te in their hexagonal phase, with growth in the direction (111) predominating in all the films made. The optical UV results showed that as the doping ratio went up, the energy gap values went down from 2.58 eV to 2.12 eV, while the transmittance spectrum went up as the annealing temperature went up.