A Low-Power All-MOS Voltage Reference

本文提出了一种低功耗全MOS电压基准源设计，利用MOS管在亚阈值区的温度特性，降低了功耗并满足低电压、宽温度范围的需求。传统的带隙基准源由于采用双极管和电阻，无法满足低功耗应用的要求，因此，本文设计了一种全MOS管的基准电压源，通过优化电路结构和工作原理，实现了低静态功耗、较宽的工作温度范围和较低的温度系数。仿真结果显示，在−55℃到150℃的温度范围内，输出电压变化仅为2.03 mV，温度系数为16.5 × 10⁻⁶/℃，静态电流为5.7 μA，功耗为6.84 μW，PSRR为−59.16 dB。该设计在低功耗、低电压应用中具有显著优势，适用于物联网、可穿戴设备等对功耗要求较高的场合。This paper proposes a low-power all-MOS voltage reference design that utilizes the temperature characteristics of MOS transistors operating in the subthreshold region to achieve low power consumption while meeting the requirements of low voltage and wide temperature range. Traditional bandgap reference circuits, which rely on bipolar junction transistors and resistors, fail to satisfy the demands of low-power applications. Therefore, this design adopts an all-MOS voltage reference structure. By optimizing the circuit architecture and operational principles, the design achieves low static power consumption, a wide operating temperature range, and a low temperature coefficient. Simulation results show that within the temperature range of −55˚C to 150˚C, the output voltage variation is only 2.03 mV, with a temperature coefficient of 16.5×10⁻⁶/˚C. The static current is 5.7 μA, power consumption is 6.84 μW, and the power supply rejection ratio (PSRR) is −59.16 dB. This design demonstrates significant advantages in low-power, low-voltage applications, making it suitable for use in IoT devices, wearable electronics, and other scenarios with stringent power consumption requirements.