The γ-Ray TID Effect and Irradiation Damage Recovery on β-Ga₂O₃/Al₂O₃ MOSCAPs

In this study, the impact of γ-ray total ionizing dose (TID) irradiation on the electrical performance of beta-gallium oxide (β-Ga<roman>2</roman>O<roman>3</roman>)/Al<roman>2</roman>O<roman>3</roman> MOSCAPs was investigated, and a new irradiation damage recovery method was also proposed using the supercritical N<roman>2</roman>O (SCN<roman>2</roman>O) fluid postoxidation annealing (POA) process. After a cumulative γ-ray dose of 1.108 Mrad (SiO<roman>2</roman>), the net carrier concentration (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N<roman>d</roman>) decreased by 28.7%, and the interface state density (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D<roman>it</roman>) increased from 4.41 × 10<roman>11</roman> to 5.12 × 10<roman>11</roman> eV-<roman>1</roman>cm-<roman>2</roman>, according to the frequency-dependent capacitance–voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C–<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V) measurements. Meanwhile, the effective trapped charge density (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N<roman>eff</roman>) was reduced from -1.82 × 10<roman>12</roman> to -1.37 × 1012 eV-<roman>1</roman>cm-<roman>2</roman>, leading to a decreased flat-band voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<roman>fb</roman>), which was attributed to the formation of positively charged oxide trapped charge (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N<roman>ot</roman>). What is more, the forward leakage current density increased by ten times, and a 9.5% decrease in the breakdown voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<roman>br</roman>) was observed according to the current–voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I–<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V) measurements. Moreover, the leakage current analysis indicated that the changes in the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I–<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V characteristics were primarily caused by variations in <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D<roman>it</roman> and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N<roman>ot</roman>. In addition, after the SCN<roman>2</roman>O POA process at 120 ∘C, the damages of the irradiated device can be repaired. Specifically, the material properties, such as <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N<roman>d</roman>, <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D<roman>it</roman>, and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N<roman>eff</roman>, and the electrical properties of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<roman>br</roman> and the forward leakage current density recovered to the preirradiation level. The results demonstrated that the low-temperature SCN<roman>2</roman>O POA process is promising for repairing TID irradiation damage in β-Ga<roman>2</roman>O<roman>3</roman>/Al<roman>2</roman>O<roman>3</roman>⋅devices.

Authors

Xiaoping Ouyang (ORCID: https://orcid.org/0000-0001-8474-2869)
Songquan Yang
Weihao Liu
Leidang Zhou (ORCID: https://orcid.org/0000-0003-3052-5556)
Li Geng (ORCID: https://orcid.org/0000-0003-4002-9281)
Fangbao Wang (ORCID: https://orcid.org/0000-0002-9333-1436)
Liang Chen (ORCID: https://orcid.org/0000-0002-5281-0748)
Ming Li (ORCID: https://orcid.org/0009-0000-6137-7109)
Song Li (ORCID: https://orcid.org/0000-0002-3482-4126)
Yue Hao (ORCID: https://orcid.org/0000-0002-8081-2919)
Mingchao Yang (ORCID: https://orcid.org/0009-0005-2239-0112)
Silong Zhang (ORCID: https://orcid.org/0000-0001-9936-3300)
Zhang Wen (ORCID: https://orcid.org/0009-0007-5254-4754)

Institutions

Xidian University (CN)
Northwest Institute of Nuclear Technology (CN)
State Key Laboratory of Multiphase Flow in Power Engineering
Xiangtan University (CN)
Xi'an Jiaotong University (CN)

Publication Details

Journal: IEEE Transactions on Electron Devices
Published: 2025-04-17
DOI: https://doi.org/10.1109/ted.2025.3552361
Citations: 2
Primary Topic: Ga2O3 and related materials
Type: article
Field-Weighted Citation Impact: 0.85

Funders

National Natural Science Foundation of China

The <i>γ</i>-Ray TID Effect and Irradiation Damage Recovery on <i>β</i>-Ga₂O₃/Al₂O₃ MOSCAPs

Authors

Institutions

Publication Details

Funders

The γ-Ray TID Effect and Irradiation Damage Recovery on β-Ga₂O₃/Al₂O₃ MOSCAPs

The γ-Ray TID Effect and Irradiation Damage Recovery on β-Ga₂O₃/Al₂O₃ MOSCAPs

Abstract

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