High-Density Sensor Array Based on a-IGZO TFT for Pressure and Light Response

Detection capabilities similar to those of eyeballs and skin, such as pressure and light sensing, are crucial for electronic skins, bionic eyeballs, human–machine interactions, and biomimetic robots. Previous studies have primarily focused on investigating individual physical quantities, while simultaneously mapping these quantities remains challenging. This article introduces a dual-parameter sensor array based on amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The array is capable of simultaneously and independently detecting pressure (106.9 kPa<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-<roman>1</roman></sup>, ranging from 0.5 to 10 kPa) and ultraviolet (UV) light (0.5 (μW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sup>)<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-<roman>1</roman></sup>, ranging from 0 to 76 μW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sup>). The pressure detection is achieved through a patterned conductive film connected to the source electrode of the TFTs, while the UV light is detected by photogenerated electron-hole pairs in the a-IGZO channel. Integration of TFTs increase the spatial resolution of both the pressure and light sensor array to 128 pixels per square centimeter (PPSC). The development of this dual-parameter high-density sensor array holds profound significance for applications in biomimetic eyeballs and electronic skin, such as texture and shape recognition.

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Publication Details

Journal
IEEE Transactions on Electron Devices
Published
2025-04-17
DOI
https://doi.org/10.1109/ted.2025.3558495
Citations
1
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
0.73

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article

High-Density Sensor Array Based on a-IGZO TFT for Pressure and Light Response

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article

High-Density Sensor Array Based on a-IGZO TFT for Pressure and Light Response

Jixing Zhou, Tingting Zhao, Jianhua Zhang, Longlong Chen, Hai Liu, Xudong Zhang, Junshuai Dai, Longwei Xue
article en
1 citations

Abstract

Detection capabilities similar to those of eyeballs and skin, such as pressure and light sensing, are crucial for electronic skins, bionic eyeballs, human–machine interactions, and biomimetic robots. Previous studies have primarily focused on investigating individual physical quantities, while simultaneously mapping these quantities remains challenging. This article introduces a dual-parameter sensor array based on amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The array is capable of simultaneously and independently detecting pressure (106.9 kPa<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-<roman>1</roman></sup>, ranging from 0.5 to 10 kPa) and ultraviolet (UV) light (0.5 (μW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sup>)<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-<roman>1</roman></sup>, ranging from 0 to 76 μW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sup>). The pressure detection is achieved through a patterned conductive film connected to the source electrode of the TFTs, while the UV light is detected by photogenerated electron-hole pairs in the a-IGZO channel. Integration of TFTs increase the spatial resolution of both the pressure and light sensor array to 128 pixels per square centimeter (PPSC). The development of this dual-parameter high-density sensor array holds profound significance for applications in biomimetic eyeballs and electronic skin, such as texture and shape recognition.

IEEE Transactions on Electron DevicesVol. 72(6)
Shanghai University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 29%
Thin-Film Transistor Technologies
0.73
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