Experimental Investigation on the Influence of High Temperature on Total Ionizing Dose Effect in Bulk FinFETs

The total ionizing dose response of bulk nFinFETs at high temperature is experimentally investigated. Compared with irradiation at room temperature, bulk nFinFETs show larger off-state leakage current and negative threshold voltage shift, while the on-state current and transconductance decrease after irradiation at high temperature. Further investigation indicates that high temperature and radiation have obvious combined effect on the off-state leakage current of bulk nFinFETs, while no combined effect on threshold voltage, on-state current and transconductance is observed. However, the combined effect gradually diminishes with the gate length increasing. The underlying mechanism is discussed. The results may deepen the understanding of the radiation effects of bulk FinFETs and provide guideline for the radiation-hardened design of FinFET-based integrated circuits.