Mechanical, optical, and thermoelectric properties of α-BaSnS<sub>3</sub> and β-BaSnS<sub>3</sub>
This study explores the mechanical, optical, and thermoelectric properties of α-BaSnS<sub>3</sub> and β-BaSnS<sub>3</sub> through first-principles calculations. The mechanical analysis reveals that both structures exhibit ductile behaviour. Furthermore, phonon dispersion calculations at 0 K show no imaginary frequencies, confirming their dynamical stability. The electronic structure analysis identifies both compounds as indirect bandgap semiconductors, with a bandgap of 1.63 eV for α-BaSnS<sub>3</sub> and 1.12 eV for β-BaSnS<sub>3</sub>. Optical property analysis indicates that both compounds exhibit high absorption coefficients, reaching up to ∼10<sup>6</sup> cm<sup>-1</sup> in the ultraviolet region and approximately ∼10<sup>5</sup> cm<sup>-1</sup> in the visible spectrum, demonstrating their potential for optoelectronic applications. To explore the thermal transport properties, we calculated the lattice thermal conductivity using particle-like and wave-like transport channels. At 300 K, α-BaSnS<sub>3</sub> exhibits an average <i>k</i> <sub>p</sub> of 1.030 W m<sup>-1</sup> K<sup>-1</sup> and <i>k</i> <sub>c</sub> of 0.112 W m<sup>-1</sup> K<sup>-1</sup>, whereas β-BaSnS<sub>3</sub> exhibits average values of 0.128 W m<sup>-1</sup> K<sup>-1</sup> for <i>k</i> <sub>p</sub> and 0.179 W m<sup>-1</sup> K<sup>-1</sup> for <i>k</i> <sub>c</sub>. This reduction in β-BaSnS<sub>3</sub> is primarily attributed to its pronounced anharmonicity and extremely short phonon lifetimes, which predominantly range from 0.1 to 1 ps. In terms of thermoelectric performance, α-BaSnS<sub>3</sub> achieves a <i>ZT</i> value of 1.05 at 600 K, while β-BaSnS<sub>3</sub> achieves an even higher <i>ZT</i> value of 1.06 under specific doping conditions. These results highlight the potential of the two phases of BaSnS<sub>3</sub> for applications in thermoelectric and optoelectronic technologies.
Authors
- S G Wang
- Liping Zhang (ORCID: https://orcid.org/0000-0003-2115-1767)
Institutions
- China University of Mining and Technology (CN)
Publication Details
- Journal
- RSC Advances
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ra01106j
- Citations
- 4
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 2.92
Funders
- Jiangsu Science and Technology Department