Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects
• Epitaxial growth of aluminum thin films on antimonide heterostructures . • MBE growth of high mobility InAs quantum wells . • high-quality epi-Al/antimonide heterostructures for quantum information science and microelectronics applications. In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero °C. A sharp superconducting transition at T ∼ 1.3 K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility μ ∼ 1.0 × 10 6 cm 2 /Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.
Authors
- John F. Klem (ORCID: https://orcid.org/0000-0002-0598-5780)
- William M. Martinez (ORCID: https://orcid.org/0009-0005-9940-8587)
- Samuel D. Hawkins (ORCID: https://orcid.org/0000-0002-4705-1628)
- Denis Mamaluy (ORCID: https://orcid.org/0000-0002-8513-2365)
- Aaron J. Muhowski (ORCID: https://orcid.org/0000-0002-5659-6136)
- Keshab Sapkota (ORCID: https://orcid.org/0000-0001-8581-4211)
- Enrico Rossi (ORCID: https://orcid.org/0000-0002-2647-3610)
- Ping Lü (ORCID: https://orcid.org/0000-0002-8953-1494)
- Robert Reyna
- Lee Smith (ORCID: https://orcid.org/0000-0003-1846-8050)
- Juan Mendez Granado (ORCID: https://orcid.org/0000-0002-9493-0879)
- Wei Pan (ORCID: https://orcid.org/0000-0003-1121-9879)
- Zhi Jiang (ORCID: https://orcid.org/0000-0003-2783-4155)
- Doyle A. Temple
- Z. Enderson
- Courtney L.H. Sovinec
Institutions
- Norfolk State University (US)
- Oak Ridge Associated Universities (US)
- Oak Ridge National Laboratory (US)
- Georgia Institute of Technology (US)
- William & Mary (US)
- Sandia National Laboratories California (US)
- Williams (United States) (US)
- Sandia National Laboratories (US)
Publication Details
- Journal
- Materials Science and Engineering B
- Published
- 2025-04-17
- DOI
- https://doi.org/10.1016/j.mseb.2025.118285
- Citations
- 1
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 1.25
Funders
- National Science Foundation
- U.S. Department of Energy
- National Nuclear Security Administration
- Basic Energy Sciences
- Laboratory Directed Research and Development
- Sandia National Laboratories