Reduced carrier–phonon scattering and enhanced absorption in silver-doped transition metal dichalcogenide photodetectors

Bulk tungsten disulfide, an indirect band gap semiconductor, has low optical absorbance, which can be overcome through silver doping, for applications in high-performance photodetection.

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Publication Details

Journal
New Journal of Chemistry
Published
2025-01-01
DOI
https://doi.org/10.1039/d4nj05435k
Citations
1
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.52
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article

Reduced carrier–phonon scattering and enhanced absorption in silver-doped transition metal dichalcogenide photodetectors

Md Samim Reza, Henam Sylvia Devi, Pramit K. Chowdhury, Madhusudan Singh et al.
1 citations
New Journal of Chemistry
2D Materials and Applications
0.52
article

Reduced carrier–phonon scattering and enhanced absorption in silver-doped transition metal dichalcogenide photodetectors

Md Samim Reza, Henam Sylvia Devi, Pramit K. Chowdhury, Madhusudan Singh, S. Majumdar, Maninder Kaur
article en
1 citations

Abstract

Bulk tungsten disulfide, an indirect band gap semiconductor, has low optical absorbance, which can be overcome through silver doping, for applications in high-performance photodetection.

New Journal of ChemistryVol. 49(20)
Manipur University (IN), Indian Institute of Technology Delhi (IN)
Openalex Percentile: Top 40%
2D Materials and Applications
0.52
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