Robust Tunnel TaO <sub>x</sub> Passivating Interlayer Enables Long‐Term Solar Water Oxidation

Silicon-based photoelectrochemical (PEC) cells offer significant advantages for solar-to-clean fuel conversion but face challenges such as surface recombination and poor stability, necessitating a comprehensive understanding of device failure mechanisms and effective mitigation strategies. Using nickel-decorated n-type silicon (n-Si/Ni) as a model photoelectrode, we demonstrate that surface restructuring during operation initially passivates surface recombination but eventually blocks photogenerated hole transfer, leading to device failure. To mitigate this challenge, an ultrathin (<1 nm) tantalum oxide (TaO<sub>x</sub>) interlayer is introduced via atomic layer deposition (ALD). This TaO<sub>x</sub> layer serves as both a passivating contact and a corrosion-resistant coating. The n-Si/TaO<sub>x</sub>/Ni electrode achieves an increased photovoltage from 150 to 500 mV during the activation process, and then significantly extends the device lifespan, maintaining over 90% performance for 500 h in 1 M KOH at 1.52 V versus RHE. These results highlight the implementation of amorphous TaO<sub>x</sub> in enhancing both the efficiency and durability of silicon-based PEC systems, providing a simultaneously passivating and protective strategy for solar-to-fuel conversion technologies under harsh conditions.

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Publication Details

Journal
Angewandte Chemie International Edition
Published
2025-04-17
DOI
https://doi.org/10.1002/anie.202506326
Citations
3
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
2.19

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article

Robust Tunnel TaO x Passivating Interlayer Enables Long‐Term Solar Water Oxidation

Wangxi Liu, Zhigang Zou, Jia-Cheng Jian, Bin Gao et al.
3 citations
Angewandte Chemie International Edition
Semiconductor materials and devices
2.19
article

Robust Tunnel TaO x Passivating Interlayer Enables Long‐Term Solar Water Oxidation

Wangxi Liu, Zhigang Zou, Jia-Cheng Jian, Bin Gao, Zhaosheng Li, Zengguang Huang, Jianyong Feng, Yu Zhu, Huiting Huang, Yu Tao, Huihui Yan, Changhao Liu, Yuanqi Wang, Lijuan Zhang
article en
3 citations

Abstract

Silicon-based photoelectrochemical (PEC) cells offer significant advantages for solar-to-clean fuel conversion but face challenges such as surface recombination and poor stability, necessitating a comprehensive understanding of device failure mechanisms and effective mitigation strategies. Using nickel-decorated n-type silicon (n-Si/Ni) as a model photoelectrode, we demonstrate that surface restructuring during operation initially passivates surface recombination but eventually blocks photogenerated hole transfer, leading to device failure. To mitigate this challenge, an ultrathin (<1 nm) tantalum oxide (TaO<sub>x</sub>) interlayer is introduced via atomic layer deposition (ALD). This TaO<sub>x</sub> layer serves as both a passivating contact and a corrosion-resistant coating. The n-Si/TaO<sub>x</sub>/Ni electrode achieves an increased photovoltage from 150 to 500 mV during the activation process, and then significantly extends the device lifespan, maintaining over 90% performance for 500 h in 1 M KOH at 1.52 V versus RHE. These results highlight the implementation of amorphous TaO<sub>x</sub> in enhancing both the efficiency and durability of silicon-based PEC systems, providing a simultaneously passivating and protective strategy for solar-to-fuel conversion technologies under harsh conditions.

Angewandte Chemie International EditionVol. 64(26)
Nanjing Tech University (CN), Hankou University (CN), Nanjing University of Science and Technology (CN), Collaborative Innovation Center of Advanced Microstructures (CN), Ocean University of China (CN), Nanjing University (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, Government of Jiangsu Province, Natural Science Foundation of Jiangsu Province, National Key Research and Development Program of China, National Science Fund for Distinguished Young Scholars
Industry, innovation and infrastructure
Openalex Percentile: Top 13%
Semiconductor materials and devices
2.19
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