Schottky barrier formation and band realignment of rare-earth tritelluride charge density wave material–semiconductor interfaces
We investigated the formation of Schottky barriers at the interface between rare-earth tritelluride (RTe3) crystals and n-type silicon (n-Si) substrates. This study explores the rectifying characteristics of RTe3/n-Si junctions (R = Dy, Ho, Er) and their relation to the charge density wave (CDW) transition. Using the thermionic emission model, we analyzed current–voltage (I–V) measurements to obtain the Schottky barrier height (ϕSBH) and the ideality factor (η). The temperature dependence of the extracted ϕSBH and η reveals kink features near the CDW transition temperature. The Schottky–Mott model is employed to explain these kink features in the derivatives of ϕSBH and 1/η and attributes them to changes in the work function of RTe3 during the CDW transition. Our findings suggest that Schottky junctions can be utilized to probe the electronic states of RTe3, enabling potential RTe3 device applications in electronics and optoelectronics.
Authors
- Rounak Banerjee (ORCID: https://orcid.org/0000-0002-9921-8493)
- Blake Povilus (ORCID: https://orcid.org/0000-0003-3393-7847)
- Sefaattin Tongay (ORCID: https://orcid.org/0000-0001-8294-984X)
- Yunbo Ou (ORCID: https://orcid.org/0000-0002-9350-8756)
- Jan Kopaczek (ORCID: https://orcid.org/0000-0003-4851-9568)
- Seyed Tohid Rajaei Moosavy
- Kentaro Yumigeta (ORCID: https://orcid.org/0000-0003-1938-0915)
- Renee Sailus (ORCID: https://orcid.org/0000-0003-0760-0992)
- Anvesh Yarra
- Hayley Ruddick (ORCID: https://orcid.org/0000-0003-4980-9495)
- Mukesh Kumar (ORCID: https://orcid.org/0000-0002-8207-9343)
- Sushant Lakhavade
- Zafer Mutlu
Institutions
- Wrocław University of Science and Technology (PL)
- University of Arizona (US)
- Arizona State University (US)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-04-14
- DOI
- https://doi.org/10.1063/5.0253262
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Division of Materials Research
- Division of Civil, Mechanical and Manufacturing Innovation
- Division of Electrical, Communications and Cyber Systems
- Division of Chemistry
- Division of Biological Infrastructure
- Division of Materials Sciences and Engineering