Design of Photovoltaic Inverter Based on GaN Devices

In grid-connected photovoltaic systems, the main goal is to design a high-efficiency photovoltaic inverter with higher efficiency and control the power injected into the grid by the inverter. This article proposes a design scheme for a high-efficiency photovoltaic inverter based on gallium nitride (GaN) power devices. The inverter uses the wide-bandgap semiconductor GaN as the switching device, combined with the HERIC inverter structure, to significantly reduce power loss and the impact of common-mode current. Experimental results show that the conversion efficiency of the inverter can reach 98.88%, and it has superior performance in improving grid-connected efficiency and reducing harmonic distortion.