A New LDMOS Structure Using GaN with Improved Breakdown Voltage and Figure of Merit

In this paper, a Laterally Double Diffused Metal Oxide Semiconductor (LDMOS) was designed to accomplish high breakdown voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathbf{V}_{\mathbf{BR}})$</tex> and figure of merit (FOM). This proposed LDMOSFET consists of the double p-type Gallium Nitride windows located in the buried oxide and single p-type Gallium Nitride pocket in the drift region. The structure has Double p-windows and Single p-type pocket GaN based LDMOS (DPW-SPP-GaN-LDMOS) having the high electric field. Further, the proposed structure has high breakdown voltage due to changes in the electric field profile and high potential using double p-window optimization and pocket height. The proposed DPW-SPP-GaN-LDMOS breakdown voltage and figure of merit are compared to two other proposed designs: double p-type Gallium Nitride windows in the buried oxide (DPW-GaN-LDMOS) and a single p-type Gallium Nitride pocket in the drift area (SPP-GaN-LDMOS). The proposed DPW-SPP-GaN-LDMOS breakdown voltage was 126.92 V higher than that of conventional LDMOS, DPW-GaN-LDMOS, and SPP-GaN-LDMOS, which were 98.86 V, 114.60 V, and 120.79 V, respectively. Furthermore, the figure of merit (FOM) of three LDMOS designs, DPW-GaN-LDMOS, SPP-GaN-LDMOS, and DPW-SPP-GaN-LDMOS, increased by 32.68%, 38.90%, and 46.56% compared to conventional LDMOS figure of merit <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{12}.\mathbf{39} \mathbf{MW}/\mathbf{cm}^{\mathbf{2}}$</tex>.