Preliminary characterisation of titanium nitride kinetic inductance travelling-wave parametric amplifiers

<ns3:p> Background Kinetic inductance travelling-wave parametric amplifiers (KITWPAs) have proven effective in achieving high gain over broad bandwidths whilst achieving near quantum-limited noise performance, properties which are extremely important for many ultra-sensitive experiments such as radio/millimetre/sub-millimetre astronomy, neutrino mass experiments, and axion dark matter searches, as well as commercial applications like quantum computational and communication systems. Methods This paper introduces the preliminary experimental exploration of an alternative KITWPA utilising thin titanium nitride (TiN) films as opposed to the conventionally used niobium titanium nitride (NbTiN) films. TiN films exhibit properties that could be advantageous for KITWPA operation, owing to its controllable critical temperature (T <ns3:sub>c</ns3:sub> ) and physical robustness, hence KITWPAs fabricated from TiN films have the potential to replace NbTiN-based TWPAs for various applications, such as reducing the high pump power required to drive a NbTiN TWPA. Our TiN-based KITWPA devices were designed and fabricated with a 42 cm long coplanar waveguide transmission line patterned into a 100 nm thick TiN film, wound in a double spiral fashion to fit into a 2.2×2.2 cm chip. Results We successfully achieved broadband performance, with the best device displaying a peak averaged gain of ~5 dB with a bandwidth of ~3–13 GHz, making this one of the first broadband gain measurements of a TiN KITWPA reported in the literature. Despite this, the measured gain in all batches was lower than simulated due unexpected additional loss mechanisms. Conclusions The preliminary results presented here suggest that TiN films are suitable for KITWPA operation, although further investigation is required to improve the gain performance. </ns3:p>