Weak Chemical Bonds and High Electrical Conductivities Lead to High Thermoelectric Performance in Zintl Compounds Sr<sub>2</sub>CdX<sub>2</sub> (X = As, Sb, and Bi)
Zintl semiconductors are known to exhibit exceptional thermoelectric properties, due to their high electron transport and low lattice thermal conductivity (κ<sub>L</sub>). In this work, thermoelectric properties of Zintl compounds Sr<sub>2</sub>CdX<sub>2</sub> (X = As, Sb, Bi) were studied by using first-principles calculations in conjunction with Boltzmann transport theory. Both Sr<sub>2</sub>CdSb<sub>2</sub> and Sr<sub>2</sub>CdBi<sub>2</sub> adopt the same structure as Sr<sub>2</sub>CdAs<sub>2</sub> (<i>Cmc</i>2<sub>1</sub>) and are synthesizable. All of these compounds demonstrate low lattice thermal conductivities, ranging from 2.3 to 0.5 Wm<sup>1-</sup> K<sup>-1</sup> at 300 K, attributed to their low sound velocity and significant three-phonon scattering, which originate from the weak chemical bonds and strong interaction between acoustic phonons and low-lying optical phonons. The low polar-optical phonon scattering is a result of the relatively small contributions of ions to dielectric constants. Notably, the electrical conductivities (σ) and κ<sub>L</sub> of these compounds exhibit significant anisotropy, with the highest and lowest values being along the <i>x</i>- and <i>z</i>-axis, respectively. Consequently, the highest <i>ZT</i> values of Sr<sub>2</sub>CdAs<sub>2</sub> (1.39), Sr<sub>2</sub>CdSb<sub>2</sub> (1.97), and Sr<sub>2</sub>CdBi<sub>2</sub> (1.74) are achieved along the <i>x</i>-direction at 800 K under n-type doping, respectively, which is comparable or even superior to the well-studied thermoelectric material Mg<sub>3</sub>Sb<sub>2</sub>, positioning them as promising candidates for thermoelectric applications.
Authors
- Zhonghao Xia (ORCID: https://orcid.org/0000-0002-1202-7521)
- Jiangang He (ORCID: https://orcid.org/0000-0001-9643-3617)
- Ze‐Guang Han (ORCID: https://orcid.org/0000-0002-1018-1752)
- Chengwei Zhang (ORCID: https://orcid.org/0000-0002-5254-5403)
- Jinbao Wang (ORCID: https://orcid.org/0000-0003-0947-6868)
Institutions
- Advanced Materials and Devices (United States) (US)
- University of Science and Technology Beijing (CN)
Publication Details
- Journal
- Inorganic Chemistry
- Published
- 2025-04-17
- DOI
- https://doi.org/10.1021/acs.inorgchem.5c00031
- Citations
- 4
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 2.07
Funders
- National Natural Science Foundation of China