Anisotropy of Voltage Sensitivity of Bow-Tie Microwave Diodes Containing 2DEG Layer

Microwave Bow-Tie Diodes operate across a broad frequency range, including THz radiation detection and THz imaging applications. When fabricated using modulation-doped structures, these diodes exhibit enhanced detection properties that are best characterized by voltage sensitivity. The sensitivity is influenced by multiple factors, including diode design, semiconductor material quality, and the characteristics of the ohmic contacts. In this study, we examine how the electrical properties of modulation-doped bow-tie diodes are affected by their orientation relative to the crystallographic axes. Extensive investigations on various bow-tie diodes exposed to broadband microwave radiation, both in darkness and under white and infrared light illumination, enabled us to identify the optimal diode designs and illumination conditions for maximizing sensitivity to electromagnetic radiation. Based on our findings, we provide recommendations for diode design and illumination conditions to enhance the diode’s sensitivity to microwave radiation while minimizing illumination-induced effects on electrical properties.