Exciton dynamics and random lasing in surface-passivated CdSe/CdSeS core/crown nanoplatelets

Abstract CdSe nanoplatelets (NPLs) are promising candidates for on-chip light sources, yet their performance is hindered by surface defects and inefficient optical gain. Herein, we demonstrate that CdSeS crown passivation significantly enhances the photophysical property of CdSe NPLs. Laser spectroscopy techniques reveal suppressed electronic and hole trapping at lateral surfaces, leading to a 4.2-fold increase in photoluminescence quantum yield and a shortened emission lifetime from 13.5 to 4.8 ns. In addition, amplified spontaneous emission is achieved under nanosecond pulse pumping, with thresholds of 0.75 to 0.16 mJ/cm 2 for CdSe and CdSe/CdSeS NPLs, respectively. By integrating CdSe/CdSeS NPLs with high-refractive-index SiO 2 scatters, coherent random lasing is realized at a threshold of 0.21 mJ/cm 2 . These findings highlight the critical role of lateral surface passivation in optimizing optical gain and pave the way for low-cost, multifunctional nanophotonic devices.

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Publication Details

Journal
Chinese Physics B
Published
2025-04-16
DOI
https://doi.org/10.1088/1674-1056/adcd46
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
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article

Exciton dynamics and random lasing in surface-passivated CdSe/CdSeS core/crown nanoplatelets

Huan 欢 Liu 刘, Puning 谱宁 Wang 王, Rui 锐 Chen 陈
Chinese Physics B
Quantum Dots Synthesis And Properties
article

Exciton dynamics and random lasing in surface-passivated CdSe/CdSeS core/crown nanoplatelets

Huan 欢 Liu 刘, Puning 谱宁 Wang 王, Rui 锐 Chen 陈
article en

Abstract

Abstract CdSe nanoplatelets (NPLs) are promising candidates for on-chip light sources, yet their performance is hindered by surface defects and inefficient optical gain. Herein, we demonstrate that CdSeS crown passivation significantly enhances the photophysical property of CdSe NPLs. Laser spectroscopy techniques reveal suppressed electronic and hole trapping at lateral surfaces, leading to a 4.2-fold increase in photoluminescence quantum yield and a shortened emission lifetime from 13.5 to 4.8 ns. In addition, amplified spontaneous emission is achieved under nanosecond pulse pumping, with thresholds of 0.75 to 0.16 mJ/cm 2 for CdSe and CdSe/CdSeS NPLs, respectively. By integrating CdSe/CdSeS NPLs with high-refractive-index SiO 2 scatters, coherent random lasing is realized at a threshold of 0.21 mJ/cm 2 . These findings highlight the critical role of lateral surface passivation in optimizing optical gain and pave the way for low-cost, multifunctional nanophotonic devices.

Chinese Physics BVol. 34(9)
Southern University of Science and Technology (CN)
Openalex Percentile: Top 95%
Quantum Dots Synthesis And Properties
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