A New Back‐End‐Of‐Line Ferroelectric Field‐Effect Transistor Platform via Laser Processing (Small 15/2025)
Field-Effect Transistors In article number 2406376, Wonjun Shin, Suraj S. Cheema, Daewoong Kwon, and co-workers demonstrates a breakthrough in ferroelectric field-effect transistor (FeFET) technology by integrating polycrystalline silicon channels via locally-confined laser thermal processing and hafnia-based ferroelectrics using low-temperature atomic layer deposition. The resulting BEOL-compatible FeFET platform achieves wafer-scale uniformity, record-high memory windows, and exceptional energy efficiency, paving the way for neuromorphic computing and monolithic 3D integration.
Authors
- Suraj Cheema (ORCID: https://orcid.org/0000-0001-5878-3624)
- Ryun‐Han Koo (ORCID: https://orcid.org/0000-0002-5708-3308)
- Jiseong Im (ORCID: https://orcid.org/0000-0002-7260-9224)
- Jangsaeng Kim (ORCID: https://orcid.org/0000-0003-4519-135X)
- Donghyi Koh (ORCID: https://orcid.org/0000-0002-9699-8367)
- Wonjun Shin (ORCID: https://orcid.org/0009-0004-9488-136X)
- Jong‐Ho Lee
- Sangwoo Kim (ORCID: https://orcid.org/0009-0009-1054-4603)
- Daewoong Kwon
Institutions
- Seoul National University (KR)
- Hanyang University (KR)
- Massachusetts Institute of Technology (US)
- Sungkyunkwan University (KR)
Publication Details
- Journal
- Small
- Published
- 2025-04-01
- DOI
- https://doi.org/10.1002/smll.202570113
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00