Metal ion independent conductance through bis-chelated metal complex molecular wires based on a bis(diphenylphosphino)aniline derivative

It is becoming increasingly evident that transition metal complexes impart desirable qualities in single-molecule electronics, and testing metallic centres in combination with appropriate ligands is salient to building the next generation of single-molecule devices. Metal-phosphine complexes have been the subject of very few studies, despite their extensive use in other areas of chemistry. In this contribution, we fabricated and studied robust single-molecule junctions using linear bis-chelated ligand-metal-ligand complexes of the type [M(PNP)<sub>2</sub>]PF<sub>6</sub> (M = Cu(I), Ag(I) or Au(I); PNP = bis(diphenylphosphino)aniline functionalised with methylthio contact groups). The robustness of the devices was evinced by surface-enhanced Raman spectroscopy (SERS) and scanning-tunnelling microscopy break junction (STM-BJ) methods, and the conductance of the devices was found to be independent of the central transition metal. Quantum transport calculations show consistent HOMO-LUMO gaps between the studied complexes in the transmission plots, supporting the experimental findings. This study shows that bis-chelation is a viable approach to the fabrication of stable and robust metal-phosphine devices.

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Publication Details

Journal
Dalton Transactions
Published
2025-01-01
DOI
https://doi.org/10.1039/d5dt00292c
Primary Topic
Molecular Junctions and Nanostructures
Type
article
Field-Weighted Citation Impact
0.00

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article

Metal ion independent conductance through bis-chelated metal complex molecular wires based on a bis(diphenylphosphino)aniline derivative

Sara Sangtarash, Simon J. Higgins, George A. Koutsantonis, Amit Sil et al.
Dalton Transactions
Molecular Junctions and Nanostructures
article

Metal ion independent conductance through bis-chelated metal complex molecular wires based on a bis(diphenylphosphino)aniline derivative

Sara Sangtarash, Simon J. Higgins, George A. Koutsantonis, Amit Sil, Mattia Gatto, Hatef Sadeghi, Eleanor Barrett, Andrea Vezzoli, David Jago, Richard John Nichols, Craig M. Robertson, R. Tom Abram
article en

Abstract

It is becoming increasingly evident that transition metal complexes impart desirable qualities in single-molecule electronics, and testing metallic centres in combination with appropriate ligands is salient to building the next generation of single-molecule devices. Metal-phosphine complexes have been the subject of very few studies, despite their extensive use in other areas of chemistry. In this contribution, we fabricated and studied robust single-molecule junctions using linear bis-chelated ligand-metal-ligand complexes of the type [M(PNP)<sub>2</sub>]PF<sub>6</sub> (M = Cu(I), Ag(I) or Au(I); PNP = bis(diphenylphosphino)aniline functionalised with methylthio contact groups). The robustness of the devices was evinced by surface-enhanced Raman spectroscopy (SERS) and scanning-tunnelling microscopy break junction (STM-BJ) methods, and the conductance of the devices was found to be independent of the central transition metal. Quantum transport calculations show consistent HOMO-LUMO gaps between the studied complexes in the transmission plots, supporting the experimental findings. This study shows that bis-chelation is a viable approach to the fabrication of stable and robust metal-phosphine devices.

Dalton TransactionsVol. 54(19)
University of Liverpool (GB), The University of Western Australia (AU), University of Warwick (GB)
UK Research and Innovation, Australian Government, Leverhulme Trust, Royal Society, Royal Society of Chemistry, Engineering and Physical Sciences Research Council
Openalex Percentile: Top 94%
Molecular Junctions and Nanostructures
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