Development of a compact microwave ion source for ion implantation

Abstract The ion source serves as the pivotal component influencing the performance of ion implantation systems. This paper presents a comprehensive global model based on a 2.45 GHz electron cyclotron resonance (ECR) ion source for optimizing B + ECR sources. The model establishes relationships among the B + plasma electron temperature, electron density, B + yield, operating pressure, and operating power, which align closely with the experimental results. Leveraging the model facilitates rapid optimization of the operational parameters for B + ions. The three-electrode extraction system of the ion source was optimized using IBsimu to enhance the extraction efficiency of B + ion beams. Ultimately, stable DC B + ion beams of 10 mA are extracted at microwave power 1000 W and 4 × 10 -4 Pa. The compact structure of the 2.45 GHz ECR B + ion source, with dimensions of only Ø180 × 200 mm for the entire ion acceleration and extraction system, demonstrates promising prospects for ion implantation systems.