Performance Analysis of Advanced Step Channel FinFET Structures with Asymmetry and Source Pocket Engineering

This work presents a detailed analysis of three advanced FinFET structures: the Symmetrical Source Step Channel Double Gate FinFET (SSSC-FinFET), the Asymmetrical Source Step Channel Double Gate FinFET (ASSC-FinFET), and the Asymmetrical Source Pocket Implanted Step Channel Double Gate FinFET (ASPSC-FinFET). The study evaluates the impact of structural variations on the primary device parameters, such as threshold voltage, subthreshold slope, and on/off current ratio, by detailed analysis of energy band diagrams, electric field distributions, and drain current characteristics. The results show that asymmetry and pocket implantation significantly improve the device performance. Structure 3 (ASPSC-FinFET) shows the lowest threshold voltage of 0.111 V, the highest on-current of 0.23 mA, and an excellent on-to-off current ratio of 112,575, showing improved carrier injection and reduced short-channel effects.