An 86.71875-GHz RF Transceiver for 57.8125-Gb/s Plastic Waveguide Links With a CDR-Assisted Carrier Synchronization Technique in 28-nm CMOS

This article presents an 86.71875-GHz RF transceiver IC featuring a fully integrated clock and data recovery (CDR)-assisted carrier synchronization loop (CSL) for waveguide links. The carrier frequency of 86.71875 GHz is chosen to be the third harmonic of the baseband null frequency of 28.90625 GHz, and the carrier synchronization is achieved using a baseband CDR instead of power-and area-intensive RF circuits. The IC, fabricated in 28-nm CMOS, demonstrates 57.8125-Gb/s pulse-amplitude modulation-4 (PAM-4) data transmission over a 1.5-m waveguide channel while improving the timing margin by 38% compared to conventional methods. The Tx and Rx ICs occupying an area of 1.98 × 0.95 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> consume 190.1 and 117 mW at 57.8125 Gb/s, respectively. The test chip achieves the figure of merit (FoM) of 3.5 pJ/b/m in terms of throughput–distance and energy efficiency.

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Publication Details

Journal
IEEE Journal of Solid-State Circuits
Published
2025-04-16
DOI
https://doi.org/10.1109/jssc.2025.3554002
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
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article

An 86.71875-GHz RF Transceiver for 57.8125-Gb/s Plastic Waveguide Links With a CDR-Assisted Carrier Synchronization Technique in 28-nm CMOS

Ha-Il Song, Sean S. Park, Hyeon‐Min Bae, Konan Kwon et al.
IEEE Journal of Solid-State Circuits
Semiconductor Lasers and Optical Devices
article

An 86.71875-GHz RF Transceiver for 57.8125-Gb/s Plastic Waveguide Links With a CDR-Assisted Carrier Synchronization Technique in 28-nm CMOS

Ha-Il Song, Sean S. Park, Hyeon‐Min Bae, Konan Kwon, Hyosup Won, Woohyun Kwon, Jake Eu, Huxian Jin, Cheongmin Lee, Gain Kim, H. G. Choi, Junyoung Yoo
article en

Abstract

This article presents an 86.71875-GHz RF transceiver IC featuring a fully integrated clock and data recovery (CDR)-assisted carrier synchronization loop (CSL) for waveguide links. The carrier frequency of 86.71875 GHz is chosen to be the third harmonic of the baseband null frequency of 28.90625 GHz, and the carrier synchronization is achieved using a baseband CDR instead of power-and area-intensive RF circuits. The IC, fabricated in 28-nm CMOS, demonstrates 57.8125-Gb/s pulse-amplitude modulation-4 (PAM-4) data transmission over a 1.5-m waveguide channel while improving the timing margin by 38% compared to conventional methods. The Tx and Rx ICs occupying an area of 1.98 × 0.95 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> consume 190.1 and 117 mW at 57.8125 Gb/s, respectively. The test chip achieves the figure of merit (FoM) of 3.5 pJ/b/m in terms of throughput–distance and energy efficiency.

IEEE Journal of Solid-State CircuitsVol. 60(11)
Korea Advanced Institute of Science and Technology (KR), Daegu Gyeongbuk Institute of Science and Technology (KR), SP Technology (South Korea) (KR)
Affordable and clean energy
Openalex Percentile: Top 94%
Semiconductor Lasers and Optical Devices
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An 86.71875-GHz RF Transceiver for 57.8125-Gb/s Plastic Waveguide Links With a CDR-Assisted Carrier Synchronization Technique in 28-nm CMOS — Ha-Il Song, Sean S. Park, et al. · IEEE Journal of Solid-State Circuits (2025) | TGRS Research Map | TGRS